DC Sputtering

As the most standard sputter, the sputter system uses the current power based sputtering technique and has its simple structure.
Its deposition rate is applied to various kinds of metals almost constantly.
Its current amount is almost in direct proportion to thin film thickness so that it is easy to control it.
Compared to RF sputtering, it has larger deposition rate and uniformity of thin film.
Because of its high energy processing, it produces high adhesive strength.

Unbalance Magnetron Sputtering

By arraying permanent magnet or electromagnet on the back side of a target, it is possible to increase sputtering efficiency. And the
vortex motion of electrons reduces the collision with a board and a thin film.
In the case of an insulator, deposition rate is very large and a dielectric material makes possible sputtering and reactive sputtering.
In given input power, deposition rate can remain constant. With the proper array of permanent magnet and the use of shield,
it is possible to control uniformity of thin film thickness easily

Reactive sputtering
Sputtering forms glow discharge of inert gas (mainly including Ar, Kr, and Xe) in vacuum, and cations collide with the negatively biased target, and the target atoms are emitted by momentum transfer. If reactive gas (including N2, NH3, CH4, and C2H2) is introduced together with sputtering, reactive gas molecules get ionized and activated. When they react with the sputtered atoms, the compound film of nitride and carbide is created

[ Metal color master chip by UBM sputtering ]

Direct Deposition SYSTEM
By coating metallic materials in vacuum chamber without primary coating on head lamp injection materials and making continuous Top Coating, we established the Direct Sputter System excluding coat process to shorten work time and save cost.